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| PD- 94243 IRF4435 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D D S S G 2 VDSS = -30V 3 6 4 5 RDS(on) = 0.020 Description These P-channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -8.0 -6.4 -50 2.5 1.6 0.02 20 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 6/12/01 IRF4435 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 --- --- --- -1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V V GS = 0V, ID = -250A -0.019 --- V/C Reference to 25C, ID = -1mA 0.015 0.020 VGS = -10V, ID = -8.0A 0.026 0.035 VGS = -4.5V, ID = -5.0A --- --- V VDS = VGS, ID = -250A 11 --- S VDS = -15V, ID = -8.0A --- -10 VDS = -24V, VGS = 0V A --- -10 VDS = -15V, VGS = 0V, TJ = 70C --- -100 VGS = -20V nA --- 100 VGS = 20V 40 60 ID = -4.6A 7.1 --- nC VDS = -15V 8.0 --- VGS = -10V 16 24 VDD = -15V, VGS = -10V 76 110 ID = -1.0A ns 130 200 RG = 6.0 90 140 R D = 15 2320 --- VGS = 0V 390 --- pF VDS = -15V 270 --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 34 33 -2.5 A -50 -1.2 51 50 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, I F = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 5sec. Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF4435 1000 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 1000 -I D , Drain-to-Source Current (A) 100 -I D , Drain-to-Source Current (A) 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 10 10 -2.70V 1 1 -2.70V 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -8.0A -I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C R DS(on) , Drain-to-Source On Resistance (Normalized) 1.5 10 1.0 0.5 1 2.0 V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF4435 3500 3000 2500 2000 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = -4.6A VDS = -15V 16 C, Capacitance (pF) Ciss 12 1500 1000 500 0 1 10 100 8 4 Coss Crss 0 0 10 20 30 40 50 60 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) 10 TJ = 150 C -ID , Drain Current (A) I 100 100us TJ = 25 C 1 1ms 10 10ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF4435 8.0 0.20 0.10 -ID , Drain Current (A) -V GS(th) , Variace ( V ) 6.0 0.00 Id = -250A -0.10 4.0 -0.20 2.0 -0.30 0.0 25 50 75 100 125 150 -0.40 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature ( C) T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature 100 D = 0.50 Thermal Response (Z thJA ) 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 t2 0.01 0.00001 0.0001 0.001 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF4435 0.10 R DS ( on) , Drain-to-Source On Resistance ( ) 0.10 R DS(on) , Drain-to -Source Voltage ( ) 0.08 0.08 0.06 0.06 VGS= - 4.5V 0.04 0.04 Id = -8.0A 0.02 0.02 VGS = -10V 0.00 0 10 20 30 40 0.00 2 4 6 8 10 12 14 16 -V GS, Gate -to -Source Voltage ( V ) -I D , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com IRF4435 SO-8 Package Details D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 0.72 (.028 ) 8X 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) L 8X 6 C 8X -CB 8X 0.25 (.010) NOTES: A1 M CASBS RECOMMENDED FOOTPRINT 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X SO-8 Part Marking www.irf.com 7 IRF4435 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 6/01 8 www.irf.com |
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